Datasheet Details
| Part number | IRF8721GPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.42 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF8721GPbF Datasheet
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| Part number | IRF8721GPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.42 KB |
| Description | Power MOSFET |
| Datasheet |
IRF8721GPbF Datasheet
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The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Max.
PD - 96262 IRF8721GPbF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 8.5m @VGS = 10V 8.3nC Benefits l Very Low Gate Charge S1 AA 8D l Low RDS(on) at 4.5V VGS l Low Gate Impedance S2 S3 7D 6D l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
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