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International Rectifier Electronic Components Datasheet

IRF8788PBF Datasheet

Power MOSFET

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PD - 97137A
IRF8788PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 2.8m:@VGS = 10V 44nC
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Max.
30
±20
24
19
190
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
1
8/18/08


International Rectifier Electronic Components Datasheet

IRF8788PBF Datasheet

Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRF8788PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
95
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.024
2.3
3.04
1.80
-6.59
–––
–––
–––
–––
–––
44
12
4.7
14
13.3
18.7
22
0.54
23
24
23
11
5720
980
450
–––
–––
2.8
3.8
2.35
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 19A
V VDS = VGS, ID = 100μA
mV/°C
1.0
150
100
-100
–––
66
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 19A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 19A
––– See Figs. 17a & 17b
–––
–––
1.09
nC VDS = 16V, VGS = 0V
Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 19A
RG = 1.8Ω
––– See Fig. 15a & 15b
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
Typ.
–––
–––
Max.
230
19
Units
mJ
A
Min. Typ. Max. Units
Conditions
––– ––– 3.1
A MOSFET symbol
showing the
D
––– ––– 190
––– ––– 1.0
––– ––– 0.75
A integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 19A, VGS = 0V
eV TJ = 25°C, IS = 2.2A, VGS = 0V
––– 24 36 ns TJ = 25°C, IF = 19A, VDD = 15V
e––– 33 50 nC di/dt = 230A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number IRF8788PBF
Description Power MOSFET
Maker International Rectifier
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IRF8788PBF Datasheet PDF






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