Datasheet4U Logo Datasheet4U.com

IRF9310PBF - Power MOSFET

Features

  • Features Low RDSon (≤ 4.6mΩ) Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses results in ⇒ Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9310PbF IRF9310TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA.

📥 Download Datasheet

📁 Similar Datasheet

  • IRF9358 - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9358PbF - Dual P-Channel HEXFET Power MOSFET (Infineon)
  • IRF9388PbF - Power MOSFET (Infineon)
  • IRF9130 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9130 - P-Channel Power MOSFET (Seme LAB)
  • IRF9130 - P-Channel Power MOSFET (Intersil Corporation)
  • IRF9130SMD - P-Channel Power MOSFET (Seme LAB)
  • IRF9131 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9132 - P-Channel Power MOSFET (Samsung semiconductor)
  • IRF9133 - P-Channel Power MOSFET (Samsung semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
VDS RDS(on) max (@VGS = 10V) ID (@TA = 25°C) -30 V 6 4.6 mΩ 6 6 -20 A * Applications • Charge and Discharge Switch for Notebook PC Battery Application PD - 97437A IRF9310PbF HEXFET® Power MOSFET ' ' ' ' SO-8 Features and Benefits Features Low RDSon (≤ 4.
Published: |