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IRF9395MTRPBF - HEXFET Power MOSFET

Download the IRF9395MTRPBF datasheet PDF (IRF9395MPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Description

The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT D S S S S D MC MP MC DirectFET ™.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF9395MPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS Applications l Isolation Switch for Input Power or Battery Application VGS Qgd 15nC RDS(on) Qoss 23nC -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Qg tot 32nC Qrr 62nC Vgs(th) -1.8V Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.
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