IRFAE50 Datasheet N-Channel MOSFET

Manufacturer: International Rectifier (now Infineon)

IRFAE50 n-channel mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFAE50
Manufacturer	International Rectifier (now Infineon)
File Size	846.58 KB
Description	N-Channel MOSFET
Download	IRFAE50 Download (PDF)

General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance;

superior reverse energy and diode recovery dv/dt capability.

Overview

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAE50 800V RDS(on) 1.2 ID 7.

Key Features

Repetitive Avalanche Ratings.
Dynamic dv/dt Rating.
Hermetically Sealed.
Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche En.

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