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International Rectifier Electronic Components Datasheet

IRFB16N50KPbF Datasheet

POWER MOSFET

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SMPS MOSFET
PD - 95619
IRFB16N50KPbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive
Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Document Number: 91096
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S
D
G
TO-220AB
Max.
17
11
68
280
2.3
± 30
11
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
8/2/04
www.vishay.com
1


International Rectifier Electronic Components Datasheet

IRFB16N50KPbF Datasheet

POWER MOSFET

No Preview Available !

IRFB16N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
fStatic Drain-to-Source On-Resistance ––– 285 350 mVGS = 10V, ID = 10A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 50 µA VDS = 500V, VGS = 0V
––– ––– 250
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 30V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
5.7 ––– ––– S VDS = 50V, ID = 10A
Qg Total Gate Charge
––– 60 89
ID = 17A
Qgs Gate-to-Source Charge
––– 18 27 nC VDS = 400V
fQgd
Gate-to-Drain ("Miller") Charge
––– 28 43
VGS = 10V
td(on)
Turn-On Delay Time
––– 20 –––
VDD = 250V
tr Rise Time
––– 77 ––– ns ID = 17A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 38 –––
––– 30 –––
RG = 8.8
fVGS = 10V
Ciss Input Capacitance
––– 2210 –––
VGS = 0V
Coss Output Capacitance
––– 240 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 26 ––– pF ƒ = 1.0MHz
Coss Output Capacitance
––– 2620 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
––– 63 –––
––– 120 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
eVGS = 0V, VDS = 0V to 400V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
ch(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units Conditions
––– ––– 17 A MOSFET symbol
D
showing the
––– ––– 68 A integral reverse
G
p-n junction diode.
S
––– ––– 1.5
fV TJ = 25°C, IS = 17A, VGS = 0V
f––– 490 730 ns TJ = 25°C, IF = 17A
––– 5710 8560 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 2.2mH, RG = 25,
IAS = 17A.
ƒ ISD 17A, di/dt 500A/µs, VDD V(BR)DSS, TJ 150°C.
„ Pulse width 300µs; duty cycle 2%.
Document Number: 91096
www.vishay.com
2


Part Number IRFB16N50KPbF
Description POWER MOSFET
Maker International Rectifier
Total Page 9 Pages
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