IRFB20N50K Datasheet | International Rectifier

- 94418A SMPS MOSFET IRFB20N50K Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET® Power MOSFET VDSS RDS(on) typ. 500V 0.21Ω 20A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Low RDS(on) TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw Max. 20 12 80 280 2.2 ± 30 10 -55 to + 150 Units W W/°C V V/ns °C N Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. - - - - - - - - - Max. 330 20 28 Units m J A m J Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient...