Datasheet4U Logo Datasheet4U.com

IRFB3004GPbF - Power MOSFET

Features

  • e Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor ac.

📥 Download Datasheet

Datasheet preview – IRFB3004GPbF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96237 IRFB3004GPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 1.4mΩ 1.75mΩ 340A 195A c S G D S TO-220AB IRFB3004GPbF G D S Gate Drain Max.
Published: |