Datasheet4U Logo Datasheet4U.com

IRFB3077PBF - Power MOSFET

Features

  • a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junc.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB3077 N-Channel MOSFET INCHANGE
IRFB3004 N-Channel MOSFET INCHANGE
IRFB3006 N-Channel MOSFET INCHANGE
IRFB31N20D N-Channel MOSFET INCHANGE
IRFB3206 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB3077GPBF Power MOSFET
IRFB3004GPbF Power MOSFET
IRFB3004PBF Power MOSFET
IRFB3006GPBF Power MOSFET
IRFB3006PBF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 97047B Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G IRFB3077PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 2.8m: 3.
Published: |