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International Rectifier Electronic Components Datasheet

IRFB31N20DPBF Datasheet

HEXFET Power MOSFET

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PD - 94946
SMPS MOSFET
Applications
l High Frequency DC-DC converters
l Lead-Free
VDSS
200V
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
HEXFET® Power MOSFET
RDS(on) max
0.082
ID
31A
Benefits
l Low Gate to Drain to Reduce Switching
Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
D2Pak
TO-262
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies
l Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes  through † are on page 11
www.irf.com
1
3/1/04


International Rectifier Electronic Components Datasheet

IRFB31N20DPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

www.DataSheet4U.com
IRFB/S/SL31N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200 ––– –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.25 –––
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.082
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.5
IDSS Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Avalanche Characteristics
17 ––– –––
––– 70 107
––– 18 23
––– 33 65
––– 16 –––
––– 38 –––
––– 26 –––
––– 10 –––
––– 2370 –––
––– 390 –––
––– 78 –––
––– 2860 –––
––– 150 –––
––– 170 –––
S VDS = 50V, ID = 18A
ID = 18A
nC VDS = 160V
VGS = 10V „
VDD = 100V
ns ID = 18A
RG = 2.5
RD = 5.4, „
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
420
18
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
––– 0.75
0.50 ––– °C/W
––– 62
––– 40
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 31
––– ––– 124
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „
––– 200 300 ns TJ = 25°C, IF = 18A
––– 1.7 2.6 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number IRFB31N20DPBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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