IRFB3407ZPbF Datasheet | International Rectifier

IRFB3407ZPb F Applications HEXFET® Power MOSFET l Battery Management l High Speed Power Switching VDSS RDS(on) typ. 75V 5.0mΩ l Hard Switched and High Frequency Circuits G max. ID (Silicon Limited) c 6.4mΩ 122A Benefits ID (Package Limited) 120A l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free TO-220AB IRFB3407ZPb F Gate Drain Source Ordering Information Base part number IRFB3407ZPb F Package Type TO-220 Standard Pack Form Quantity Tube 50 plete Part Number IRFB3407ZPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) d Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode...