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International Rectifier Electronic Components Datasheet

IRFB4110GPbF Datasheet

Power MOSFET

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IRFB4110GPbF pdf
PD - 96214
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFB4110GPbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
3.7m:
c4.5m:
180A
120A
DD
G
G
Gate
S
D
G
TO-220AB
S IRFB4110GPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface
RθJA Junction-to-Ambient
www.irf.com
Max.
™180
™130
120
670
370
2.5
± 20
5.3
-55 to + 175
300
x x10lbf in (1.1N m)
190
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/06/09


International Rectifier Electronic Components Datasheet

IRFB4110GPbF Datasheet

Power MOSFET

No Preview Available !

IRFB4110GPbF pdf
IRFB4110GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250µA
d––– 0.108 ––– V/°C Reference to 25°C, ID = 5mA
g––– 3.7 4.5 mVGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
–––
–––
––– 20
––– 250
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
160 ––– ––– S VDS = 50V, ID = 75A
––– 150 210
ID = 75A
g––– 35 ––– nC VDS = 50V
––– 43 –––
VGS = 10V
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
iEffective Output Capacitance (Energy Related) –––
hEffective Output Capacitance (Time Related)
–––
1.3
25
67
78
88
9620
670
250
820
950
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 65V
gns
ID = 75A
RG = 2.6
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
iVGS = 0V, VDS = 0V to 80V
hVGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 170
MOSFET symbol
D
––– ––– 670
A
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 75A, VGS = 0V
S
––– 50
––– 60
75
90
ns
TJ = 25°C
TJ = 125°C
–––
–––
94
140
140
210
nC
TJ = 25°C
TJ = 125°C
VR = 85V,
gIF = 75A
di/dt = 100A/µs
––– 3.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25, IAS = 108A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C.
above this value.
2 www.irf.com


Part Number IRFB4110GPbF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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IRFB4110GPbF Datasheet PDF
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