IRFB4127PBF - Power MOSFET

Features

cuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2.

IRFB4127PBF Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRFB4127PBF

Datasheet Details

Part number	IRFB4127PBF
Manufacturer	International Rectifier (now Infineon)
File Size	287.75 KB
Description	Power MOSFET
Datasheet	IRFB4127PBF Datasheet
Additional preview pages of the IRFB4127PBF datasheet.

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Full PDF Text Transcription

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PD -97136A Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRFB4127PbF HEXFET® Power MOSFET D VDSS 200V RDS(on) typ. 17m: max.

Published: Mar 23, 2016 |