Datasheet4U Logo Datasheet4U.com

IRFB4310 - HEXFET Power MOSFET

Key Features

  • ature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB4310 N-Channel MOSFET Transistor Inchange Semiconductor
IRFB4310Z N-Channel MOSFET INCHANGE
IRFB4310ZPBF N-Channel MOSFET INCHANGE
IRFB4321 N-Channel MOSFET INCHANGE
IRFB4321PBF N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB4310PbF Power MOSFET
IRFB4310ZPbF Power MOSFET
IRFB4321PBF Power MOSFET
IRFB4332PBF Power MOSFET
IRFB4019PBF DIGITAL AUDIO MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96894A IRFB4310 IRFS4310 IRFSL4310 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 51.60m0V: 7.