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International Rectifier Electronic Components Datasheet

IRFB4510PbF Datasheet

Power MOSFET

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PD - 97772
IRFB4510PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D
VDSS
100V
RDS(on) typ. 10.7mΩ
max. 13.5mΩ
S
ID (Silicon Limited)
62A
D
DS
G
TO-220AB
IRFB4510PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
d Single Pulse Avalanche Energy
IAR
EAR
Avalanche Current
f Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
i Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient, TO-220
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Max.
62
44
250
140
0.95
± 20
3.2
-55 to + 175
300
x x 10lb in (1.1N m)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
4/10/12


International Rectifier Electronic Components Datasheet

IRFB4510PbF Datasheet

Power MOSFET

No Preview Available !

IRFB4510PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
100
–––
–––
–––
0.11
10.7
–––
–––
13.5
V VGS = 0V, ID = 250μA
™ V/°C Reference to 25°C, ID = 5mA
f mΩ VGS = 10V, ID = 37A
2.0 ––– 4.0 V VDS = VGS, ID = 100μA
––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.6 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
100 ––– –––
Qg
Total Gate Charge
––– 58 87
Qgs
Gate-to-Source Charge
––– 14 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 18
Qsync
Total Gate Charge Sync. (Qg - Qgd)
––– 40 –––
td(on)
Turn-On Delay Time
––– 13 –––
tr
Rise Time
––– 32 –––
td(off)
Turn-Off Delay Time
––– 28 –––
tf
Fall Time
––– 28 –––
Ciss
Input Capacitance
––– 3180 –––
Coss
Output Capacitance
––– 220 –––
Crss
Reverse Transfer Capacitance
–––
h Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
g Coss eff. (TR) Effective Output Capacitance (Time Related) –––
120
260
325
–––
–––
–––
S VDS = 25V, ID = 37A
nC ID = 37A
VDS =50V
f VGS = 10V
f ID = 37A, VDS =0V, VGS = 10V
ns VDD = 65V
ID = 37A
f RG =2.7Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig.5
h VGS = 0V, VDS = 0V to 80V , See Fig.1
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 62 A MOSFET symbol
D
showing the
––– ––– 250 A integral reverse
G
––– ––– 1.3
f p-n junction diode.
V TJ = 25°C, IS = 37A, VGS = 0V
S
––– 54 81 ns TJ = 25°C
VR = 85V,
––– 60 90
TJ = 125°C
––– 95 140 nC TJ = 25°C
f IF = 37A
di/dt = 100A/μs
––– 130 195
TJ = 125°C
––– 3.3 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.192mH
RG = 25Ω, IAS = 37A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD 37A, di/dt 1550A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ Rθ is measured at TJ approximately 90°C.
2
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Part Number IRFB4510PbF
Description Power MOSFET
Maker International Rectifier
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IRFB4510PbF Datasheet PDF






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