Datasheet4U Logo Datasheet4U.com

IRFB5615PbF - Digital Audio MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Key Parameters Optimized for Class-D Audio Amplifier.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB5615 N-Channel MOSFET INCHANGE
IRFB5620 N-Channel MOSFET INCHANGE
IRFB52N15D N-Channel MOSFET INCHANGE
IRFB59N10D N-Channel MOSFET INCHANGE
IRFB11N50A Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB5620PBF Digital Audio MOSFET
IRFB52N15D Power MOSFET
IRFB52N15DPBF Power MOSFET
IRFB59N10D Power MOSFET
IRFB59N10DPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DIGITAL AUDIO MOSFET PD - 96173 IRFB5615PbF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 300W per Channel into 4Ω Load in Half-Bridge Configuration Amplifier Key Parameters VDS 150 RDS(ON) typ. @ 10V 32 Qg typ. Qsw typ. RG(int) typ. 26 11 2.7 TJ max 175 DD V m: nC nC Ω °C G S S D G TO-220AB GD S Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.