* Fast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Higher Gate voltage threshold offers improved noise immunity. TO-220AB Units A W W/°C V V/ns °C Absolute Maximum Ratings Parameter ID
IRFB812PBF Datasheet (275.27 KB)
IRFB812PBF
International Rectifier
275.27 KB
Power mosfet.
PD -97693 IRFB812PbF Applications Zero Voltage Switching SMPS Uninterruptible Power Supplies Motor Control applications.
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