Datasheet4U Logo Datasheet4U.com

IRFC2907B - HEXFET Power MOSFET

The IRFC2907B by International Rectifier is a HEXFET Power MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the IRFC2907B HEXFET Power MOSFET datasheet (International Rectifier).

IRFC2907B Product details

Description

Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 110A V DS = VGS, ID = 250µA VDS = 75V, VGS = 0V, TJ = 25°C V GS = ±20V Min Typ.Max 75V 2.5mΩ 4.5mΩ 2.0

📁 IRFC2907B Similar Datasheet

  • IRFC250 - High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series (IXYS Corporation)
  • IRFC150 - High Voltage Power MOSFET (IXYS Corporation)
  • IRFC350 - N-Channel MOSFET (IXYS Corporation)
  • IRFC450 - HIGH VOLTAGE POWER MOSFET (IXYS Corporation)
  • IRFC9110 - P-Channel Power MOSFET (IRF)
  • IRF-24 - Inductors (Vishay)
  • IRF-36 - Inductors (Vishay)
  • IRF-46 - Inductors (Vishay Siliconix)
Other Datasheets by International Rectifier
Published: |