* n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS =± 10V, TC = 25°C Continuous Drain Current ID @ VGS =± 10V, TC = 100°C Continuous Drain Current IDM PD @ TC =
IRFG5210 Datasheet (217.24 KB)
IRFG5210
International Rectifier
217.24 KB
Combination 2n-2p-channel hexfet mosfet technology.
www.DataSheet4U.com PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summa.
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