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IRFH4209DPBF - Power MOSFET

Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickne

Features

  • Low RDS(ON) (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 36 100 V m nC A   Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters FastIRFET™ IRFH4209DPbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDS(ON) (<1.10 m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.0°C/W) Low Profile (<0.
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