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International Rectifier Electronic Components Datasheet

IRFH4210DPbF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.10
1.35
37.0
100
V
m
nC
A
 
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
FastIRFET™
IRFH4210DPbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low RDS(ON) (<1.10 m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.0°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
  
IRFH4210DPbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4210DTRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
 
Max.
± 20
44
266
168
100
400
3.5
125
0.028
-55 to + 150
 
Units
V
A
W
W/°C
°C
August 16, 2013


International Rectifier Electronic Components Datasheet

IRFH4210DPbF Datasheet

Power MOSFET

No Preview Available !

  IRFH4210DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg
Qgs1
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
392
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
      
Typ. Max. Units
Conditions
–––
19
0.85
1.10
1.6
-10
–––
–––
1.10
1.35
2.1
–––
V VGS = 0V, ID = 1mA
mV/°C Reference to 25°C, ID = 10mA
mVGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V VDS = VGS, ID = 100µA
mV/°C
––– 250 µA VDS = 20V, VGS = 0V
–––
–––
–––
77.0
37.0
100
-100
–––
–––
55.5
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
7.6
6.4
13.2
9.8
–––  
VDS = 13V
––– nC VGS = 4.5V
–––  
ID = 50A
–––  
19.6 –––  
37 ––– nC VDS = 16V, VGS = 0V
1.3 –––  
19 –––
VDD = 13V, VGS = 4.5V
45 ––– ns ID = 50A
24 –––  
RG=1.8
16 –––  
4812
1459
355
–––
––– pF
–––  
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
      
Typ.
Max.
––– 247
––– 50
      
Typ. Max. Units
Conditions
––– 100A MOSFET symbol
D
––– 400
showing the
integral reverse
G
––– 0.75
27 41
59 89
p-n junction diode.
S
V TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 13V
nC di/dt = 300A/µs
    
Typ.
–––
Max.
1.0
Units
––– 22 °C/W
––– 36
––– 21
2 www.irf.com © 2013 International Rectifier
August 16, 2013


Part Number IRFH4210DPbF
Description Power MOSFET
Maker International Rectifier
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International Rectifier





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