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International Rectifier Electronic Components Datasheet

IRFH4213PbF Datasheet

Power MOSFET

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FastIRFET™
IRFH4213PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
1.35
1.90
26
204
V
m
nC
A
 
 
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low RDSon (<1.35m)
Low Thermal Resistance to PCB (<1.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
  
IRFH4213PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4213TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
41
204
129
400
3.6
89
0.029
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
August 07, 2013


International Rectifier Electronic Components Datasheet

IRFH4213PbF Datasheet

Power MOSFET

No Preview Available !

  IRFH4213PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
228
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
21
1.10
1.50
1.6
-5.8
–––
–––
–––
–––
54
26
7.3
3.4
9.2
6.1
12.6
25
1.5
14
35
17
12
3420
940
240
 
 
Typ.
–––
–––
–––
23
37
    
Max.
–––
–––
1.35
1.90
2.1
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V VDS = VGS, ID = 100µA
mV/°C
1.0 µA
100 nA
-100
––– S
––– nC
39
–––  
––– nC
–––  
–––  
–––  
––– nC
–––  
–––
––– ns
–––  
–––  
–––
––– pF
–––  
VDS = 20V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 10V, ID = 50A
VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
VGS = 4.5V
ID = 50A
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 50A
RG=2.0
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
 
Typ.
–––
–––
 
 
Max.
134
50
    
Max. Units
Conditions
204A MOSFET symbol
D
showing the
400
integral reverse
G
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 50A, VGS = 0V
35 ns TJ = 25°C, IF = 50A, VDD = 13V
56 nC di/dt = 360A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
1.4
21
35
21
 
Units
°C/W
2 www.irf.com © 2013 International Rectifier
August 07, 2013


Part Number IRFH4213PbF
Description Power MOSFET
Maker International Rectifier
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