900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRFH4253DPbF Datasheet

Power MOSFET

No Preview Available !

VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.60
10
45
Q2
25
1.45
31
45
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
IRFH4253DPbF
HEXFET® Power MOSFET
  
 
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<1.45m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL2, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
 
IRFH4253DPbF
Package Type
 
Dual PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFH4253DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
  
Q1 Max. Q2 Max.
± 20  
64 145
51 116
Units
V
A
45
120
31
20
0.25
45
580
50
32
0.40
-55 to + 150
W
W/°C
°C
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
 
Q1 Max.
4.0
20
34
24
 
Q2 Max.
2.5
13
38
24
 
Units
°C/W
1 www.irf.com © 2013 International Rectifier
June 10, 2013


International Rectifier Electronic Components Datasheet

IRFH4253DPbF Datasheet

Power MOSFET

No Preview Available !

  IRFH4253DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Qsw
Qoss
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
  
  
 
Min. Typ. Max. Units
Conditions
Q1 25 ––– ––– V VGS = 0V, ID = 250µA
Q2 25 ––– –––
VGS = 0V, ID = 1.0mA
Q1 ––– 22 ––– mV/°C Reference to 25°C, ID = 1.0mA
Q2 ––– 22 –––
Reference to 25°C, ID = 10mA
Q1 ––– 2.50 3.20
VGS = 10V, ID = 30A
Q2 ––– 0.90 1.10 mVGS = 10V, ID = 30A
Q1 ––– 3.70 4.60
VGS = 4.5V, ID = 30A
Q2 ––– 1.15 1.45
VGS = 4.5V, ID = 30A
Q1 1.1 1.6 2.1 V Q1: VDS = VGS, ID = 35µA
Q2 1.1 1.6 2.1
Q2: VDS = VGS, ID = 100µA
Q1 ––– -5.7 ––– mV/°C Q1: VDS = VGS, ID = 35µA
Q2 ––– -8.9 –––
Q2: VDS = VGS, ID = 100µA
Q1/Q2 ––– ––– 1.0 µA VDS = 20V, VGS = 0V
Q1/Q2 ––– ––– 250
VDS = 20V, VGS = 0V
Q1/Q2 ––– ––– 100 nA VGS = 20V
Q1/Q2 ––– ––– -100
VGS = -20V
Q1 131 ––– ––– S VDS = 10V, ID = 30A
Q2 164 ––– –––
VDS = 10V, ID = 30A
Q1 ––– 10 15
Q2 ––– 31 47
Q1 ––– 2.5 –––
Q1
Q2 ––– 4.9 –––
VDS = 13V
Q1 ––– 1.6 –––
VGS = 4.5V, ID = 30A
Q2 ––– 5.4 ––– nC
Q1 ––– 3.8 –––
Q2
Q2 ––– 12 –––
Q1 ––– 2.1 –––
Q2 ––– 8.7 –––
VDS = 13V
VGS = 4.5V, ID = 30A
Q1 ––– 5.4 –––
Q2 ––– 17.4 –––
Q1 ––– 10 ––– nC VDS = 16V, VGS = 0V
Q2 ––– 31 –––
Q1 ––– 2.4 ––– 
Q2 ––– 1.1 –––
Q1 ––– 10 –––
Q1
Q2 ––– 16 –––
VDS = 13V VGS = 4.5V
Q1 ––– 61 –––
ID = 30A, Rg = 1.8
Q2 ––– 98 ––– ns
Q1 ––– 13 –––
Q2
Q2 ––– 26 –––
Q1 ––– 15 –––
Q2 ––– 65 –––
VDS = 13V VGS = 4.5V
ID = 30A, Rg = 1.8
Q1 ––– 1314 –––
Q2 ––– 3756 –––
VGS = 0V
Q1 ––– 365 ––– pF VDS = 13V
Q2 ––– 1205 –––
ƒ = 1.0MHz
Q1 ––– 92 –––
Q2 ––– 286 –––
2 www.irf.com © 2013 International Rectifier
June 10, 2013


Part Number IRFH4253DPbF
Description Power MOSFET
Maker International Rectifier
PDF Download

IRFH4253DPbF Datasheet PDF





Similar Datasheet

1 IRFH4253DPbF Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy