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International Rectifier Electronic Components Datasheet

IRFH4255DPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.60
10
30
Q2
25
2.10
23
30
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FastIRFET™
IRFH4255DPbF
HEXFET® Power MOSFET
  
 
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<2.10m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
 
IRFH4255DPbF
Package Type
 
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4255DTRPbF
Absolute Maximum Ratings
  
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20  
64 105
51
84
30
120
31
20
0.25
30
420
38
24
0.30
-55 to + 150
Units
V
A 
W 
W/°C
°C  
Thermal Resistance
Parameter
RJC (Bottom) Junction-to-Case
RJC (Top) Junction-to-Case
RJA Junction-to-Ambient
RJA (<10s) Junction-to-Ambient
Notes through are on page 12
 
Q1 Max.
4.0
20
34
24
 
Q2 Max.
3.3
12
31
19
 
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014


International Rectifier Electronic Components Datasheet

IRFH4255DPBF Datasheet

Power MOSFET

No Preview Available !

 
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current
  
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
IRFH4255DPbF
     
 
Min. Typ. Max. Units
Conditions
Q1 25 ––– –––
Q2 25 ––– –––
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Q1
Q2
–––
–––
22
23
–––
–––
mV/°C
Reference to 25°C, ID = 1.0mA
Reference to 25°C, ID = 10mA
Q1 ––– 2.50 3.20
VGS = 10V, ID = 30A
Q2
Q1
––– 1.20 1.50
––– 3.70 4.60
m 
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
Q2 ––– 1.65 2.10
VGS = 4.5V, ID = 30A
Q1 1.1 1.6 2.1
Q2 1.1 1.6 2.1
V
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Q1
Q2
–––
–––
-5.7
-5.3
–––
–––
mV/°C
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 1mA
Q1
Q2
––– ––– 1.0
––– ––– 250
µA
 
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
Q1 ––– ––– 100
VGS = 20V
Q2
Q1
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Q2 ––– ––– -100
VGS = -20V
Q1 131 ––– –––
Q2 182 ––– –––
S
VDS = 10V, ID = 30A
VDS = 10V, ID = 30A
Q1 ––– 10 15
Q2 ––– 23 35
Q1 ––– 2.5 –––
Q1
Q2 ––– 4.5 –––
VDS = 13V
Q1 ––– 1.6 –––
VGS = 4.5V, ID = 30A
Q2 ––– 2.3 ––– nC
Q1 ––– 3.8 –––
Q2
Q2 ––– 8.4 –––
VDS = 13V
Q1 ––– 2.1 –––
VGS = 4.5V, ID = 30A
Q2 ––– 7.8 –––
Q1 ––– 5.4 –––
Q2 ––– 10.7 –––
Q1
Q2
––– 10 –––
––– 23 –––
nC
VDS = 16V, VGS = 0V
Q1 ––– 2.4 –––
Q2 ––– 1.5 –––

Q1 ––– 10 –––
Q1
Q2 ––– 10 –––
VDS = 13V VGS = 4.5V
Q1 ––– 61 –––
ID = 30A, Rg = 1.8
Q2 ––– 43 –––
Q1 ––– 13 –––
ns Q2
Q2 ––– 27 –––
Q1 ––– 15 –––
Q2 ––– 26 –––
VDS = 13V VGS = 4.5V
ID = 30A, Rg = 1.8
Q1 ––– 1314 –––
Q2 ––– 2877 –––
VGS = 0V
Q1
Q2
––– 365 –––
––– 907 –––
pF
VDS = 13V
ƒ = 1.0MHz
Q1 ––– 92 –––
Q2 ––– 234 –––
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 14, 2014


Part Number IRFH4255DPBF
Description Power MOSFET
Maker International Rectifier
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