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International Rectifier Electronic Components Datasheet

IRFH4257DPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.70
9.7
25
Q2
25
1.80
23
25
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
 
 
FastIRFET™
IRFH4257DPbF
HEXFET® Power MOSFET
 
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (9.7nC typical)
Low RDSON synchronous MOSFET (<1.8m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Dual PQFN 5X4 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
 
IRFH4257DPbF
Package Type
 
Dual PQFN 5mm x 4mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4257DTRPbF
Absolute Maximum Ratings
  
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20  
68 111
54
88
25
120
25
16
0.20
25
375
28
18
0.22
-55 to + 150
Units
V
A 
W 
W/°C
°C  
Thermal Resistance
Parameter
RJC (Bottom) Junction-to-Case
RJC (Top) Junction-to-Case
RJA Junction-to-Ambient
RJA (<10s) Junction-to-Ambient
Notes through are on page 12
 
Q1 Max.
5.0
33
45
30
 
Q2 Max.
4.5
26
40
27
 
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 15, 2014


International Rectifier Electronic Components Datasheet

IRFH4257DPBF Datasheet

Power MOSFET

No Preview Available !

 
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
IDSS  
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IRFH4257DPbF
     
 
Min. Typ. Max. Units
Conditions
Q1 25 ––– –––
Q2 25 ––– –––
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = 1.0mA
Q1
Q2
–––
–––
22
22
–––
–––
mV/°C
Reference to 25°C, ID = 1.0mA
Reference to 25°C, ID = 10mA
Q1 ––– 2.7 3.4
VGS = 10V, ID = 25A
Q2
Q1
––– 1.1 1.4
––– 3.7 4.7
m 
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
Q2 ––– 1.4 1.8
VGS = 4.5V, ID = 25A
Q1 1.1 1.6 2.1
Q2 1.1 1.6 2.1
V
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 100µA
Q1
Q2
–––
–––
-5.4
-5.3
–––
–––
mV/°C
Q1: VDS = VGS, ID = 35µA
Q2: VDS = VGS, ID = 1mA
Q1
Q2
––– ––– 1.0
––– ––– 250
µA
 
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V
Q1 ––– ––– 100
VGS = 20V
Q2
Q1
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Q2 ––– ––– -100
VGS = -20V
Q1 100 ––– –––
Q2 138 ––– –––
S
VDS = 10V, ID = 25A
VDS = 10V, ID = 25A
Q1 ––– 9.7 15
Q2 ––– 23 35
Q1 ––– 2.4 –––
Q1
Q2 ––– 5.1 –––
VDS = 13V
Q1 ––– 1.2 –––
VGS = 4.5V, ID = 25A
Q2 ––– 2.6 ––– nC
Q1 ––– 3.4 –––
Q2
Q2 ––– 7.6 –––
VDS = 13V
Q1 ––– 2.7 –––
VGS = 4.5V, ID = 25A
Q2 ––– 7.7 –––
Q1 ––– 4.6 –––
Q2 ––– 10.2 –––
Q1
Q2
––– 10 –––
––– 25 –––
nC
VDS = 16V, VGS = 0V
Q1 ––– 1.4 –––
Q2 ––– 0.7 –––

Q1 ––– 8.2 –––
Q1
Q2 ––– 12 –––
Q1 ––– 47 –––
Q2 ––– 51 –––
Q1 ––– 12 –––
Q2 ––– 20 –––
Q1 ––– 20 –––
Q2 ––– 25 –––
VDS = 13V VGS = 4.5V
ID = 25A, Rg = 1.8
ns Q2
VDS = 13V VGS = 4.5V
ID = 25A, Rg = 1.8
Q1 ––– 1321 –––
Q2 ––– 3161 –––
VGS = 0V
Q1
Q2
––– 365 –––
––– 965 –––
pF
VDS = 13V
ƒ = 1.0MHz
Q1 ––– 101 –––
Q2 ––– 237 –––
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 15, 2014


Part Number IRFH4257DPBF
Description Power MOSFET
Maker International Rectifier
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