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International Rectifier Electronic Components Datasheet

IRFH5006PBF Datasheet

HEXFET Power MOSFET

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IRFH5006PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tmb = 25°C)
60
4.1
69
1.2
h100
V
mΩ
nC
Ω
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (4.1mΩ)
Low Thermal Resistance to PCB (0.8°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
results in
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH5006PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH5006TRPBF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ Tmb = 25°C
ID @ Tmb = 100°C
IDM
PD @TA = 25°C
PD @ Tmb = 25°C
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
60
±20
21
17
100h
100h
400
3.6
156
0.029
-55 to + 150
Notes  through † are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 19, 2015


International Rectifier Electronic Components Datasheet

IRFH5006PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5006PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
60
–––
–––
2.0
–––
–––
–––
–––
–––
92
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
3.5
–––
-8.0
–––
–––
–––
–––
–––
69
12
6.8
20
30.2
26.8
23
1.2
9.6
13
30
12
4175
550
255
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
e––– V/°C Reference to 25°C, ID = 1mA
4.1 mΩ VGS = 10V, ID = 50A
4.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
150μA
20
250
100
-100
–––
104
μA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 50A
––– VDS = 30V
–––
–––
nC
VGS = 10V
ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 30V, VGS = 10V
–––
–––
ns
ID = 50A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 30V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
285
50
Units
mJ
A
Parameter
IS Continuous Source Current
h(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 100
––– ––– 400
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
D
p-n junction diode.
S
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 28 42 ns TJ = 25°C, IF = 50A, VDD = 30V
––– 130 195 nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
RθJC-mb
RθJC (Top)
RθJA
RθJA (<10s)
Junction-to-Mounting Base
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
22
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015


Part Number IRFH5006PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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