IRFH5215PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.19
45.5
–––
-12
–––
–––
–––
–––
–––
21
7.2
2.2
6.7
4.9
8.9
10
2.3
6.7
6.3
11
2.9
1350
120
30
Max. Units
Conditions
––– V VGS = 0V, ID = 250uA
e––– V/°C Reference to 25°C, ID = 1.0mA
58 mΩ VGS = 10V, ID = 16A
5.0
–––
V
mV/°C
VDS
=
VGS,
ID
=
100µA
20
250
100
-100
–––
32
µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 50V, ID = 16A
––– VDS = 75V
–––
–––
nC
VGS = 10V
ID = 16A
–––
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 75V, VGS = 10V
–––
–––
ns
ID = 16A
RG=1.3Ω
–––
––– VGS = 0V
––– pF VDS = 50V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
96
16
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ÃISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 27
––– ––– 108
––– ––– 1.3
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 16A, VGS = 0V
eÖ–– 40 60 ns TJ = 25°C, IF = 16A, VDD = 75V
––– 370 555 nC di/dt = 500A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
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January 13, 2014
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