IRFH5215PBF Datasheet - International Rectifier

IRFH5215PBF Power MOSFET

IRFH5215PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 150 58 21 2.3 27 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Fri.

IRFH5215PBF Features

* Features Low RDSon (< 58 mΩ) Low Thermal Resistance to PCB (

IRFH5215PBF-InternationalRectifier.pdf