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International Rectifier Electronic Components Datasheet

IRFH5220PBF Datasheet

HEXFET Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
200 V
99.9 mΩ
20 nC
2.3 Ω
20 A
IRFH5220PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Benefits
Low RDSon
Low Thermal Resistance to PCB (1.2°C/W)
100% Rg tested
Low Profile (0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRFH5220TRPBF
IRFH5220TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
fPower Dissipation
fLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
Max.
200
± 20
3.8
3.0
20
13
5.8
3.7
47
3.6
8.3
0.07
-55 to + 150
Units
V
A
W
W/°C
°C
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015


International Rectifier Electronic Components Datasheet

IRFH5220PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5220PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.21
80
–––
-11
–––
–––
–––
–––
–––
20
5.4
1.3
6.3
7.0
7.6
9.4
2.3
7.2
4.7
14
3.4
1380
100
23
Max. Units
Conditions
–––
–––
99.9
5.0
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 5.8A
V
mV/°C
VDS
=
VGS,
ID
=
100μA
20
1.0
100
-100
–––
30
μA VDS = 200V, VGS = 0V
mA VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 50V, ID = 5.8A
––– VDS = 100V
–––
–––
nC
VGS = 10V
ID = 5.8A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 100V, VGS = 10V
–––
–––
ns
ID = 5.8A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 50V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
290
5.8
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 5.8
––– ––– 47
––– ––– 1.3
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
eV TJ = 25°C, IS = 5.8A, VGS = 0V
––– 39 59
––– 355 530
ns TJ = 25°C, IF = 5.8A, VDD = 100V
nC di/dt = 500A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015


Part Number IRFH5220PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH5220PBF Datasheet PDF






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International Rectifier





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