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International Rectifier Electronic Components Datasheet

IRFH7440PBF Datasheet

Power MOSFET

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Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
StrongIRFET™
IRFH7440PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.8mΩ
2.4mΩ
c159A
85A
PQFN 5X6 mm
Base Part Number Package Type
IRFH7440PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable Part Number
Note
IRFH7440TRPBF
IRFH7440TR2PBF
EOL notice #259
6.0
ID = 50A
5.0
4.0
TJ = 125°C
3.0
2.0
TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
200
150 Limited By Package
100
50
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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July 7, 2015


International Rectifier Electronic Components Datasheet

IRFH7440PBF Datasheet

Power MOSFET

No Preview Available !

IRFH7440PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited)
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
lSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
kJunction-to-Case
kJunction-to-Case
jJunction-to-Ambient
jJunction-to-Ambient
Parameter
Max.
159™
101™
85
624
104
0.83
± 20
3.0
-55 to + 150
121
232
See Fig. 14, 15, 22a, 22b
Typ.
Max.
––– 1.2
––– 31
––– 35
––– 22
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Min. Typ. Max.
40 ––– –––
––– 0.031 –––
––– 1.8 2.4
––– 2.7 –––
2.2 ––– 3.9
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.6 –––
Units
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
VGS = 0V, ID = 250μA
dReference to 25°C, ID = 1.0mA
gVGS = 10V, ID = 50A
gVGS = 6.0V, ID = 25A
VDS = VGS, ID = 100μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Current is limited to 85A by source bond technology.
Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.097mH
RG = 50Ω, IAS = 50A, VGS =10V.
„ ISD 50A, di/dt 1126A/μs, VDD V(BR)DSS, TJ 150°C.
… Pulse width 400μs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
FR-4 material.
‰ Rθ is measured at TJ approximately 90°C.
Š Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 22A,
VGS =10V.
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
July 7, 2015


Part Number IRFH7440PBF
Description Power MOSFET
Maker International Rectifier
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