IRFH7446PBF Datasheet | International Rectifier

Strong IRFET™ IRFH7446Pb F HEXFET® Power MOSFET Applications l Brushed Motor drive applications l BLDC Motor drive applications l PWM Inverterized topologies l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 2.5mΩ 3.3mΩ 117A 85A c Benefits l Improved Gate, Avalanche and Dynamic d V/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Ro HS pliant containing no Lead, no Bromide, and no Halogen PQFN 5X6 mm Base Part Number IRFH7446PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Orderable part number IRFH7446TRPBF IRFH7446TR2PBF Note EOL notice #259 RDS(on), Drain-to -Source On Resistance (m Ω) 8.0 7.0 6.0 5.0 T J = 125°C 4.0 3.0 2.0 1.0 4 6 8 10 12 14 16 18 20 T J = 25°C ID = 50A 125 Limited By Package 100 ID, Drain Current (A) 0 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) T C , Case Temperature (°C) Fig 1. Typical On-Resistance vs. Gate Voltage 1 .irf. © 2014 International Rectifier Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback January 17, 2014 IRFH7446Pb F Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG EAS (Thermally limited) EAS (tested) IAR EAR Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 117 74 85 ™ ™ Units A d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy 468 78 0.63 ± 20 -55 to +...