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International Rectifier Electronic Components Datasheet

IRFH7446PBF Datasheet

HEXFET Power MOSFET

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Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
StrongIRFET™
IRFH7446PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
2.5m
c3.3m
117A
85A
PQFN 5X6 mm
Base Part Number Package Type
IRFH7446PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
Note
IRFH7446TRPBF
IRFH7446TR2PBF
EOL notice #259
8.0
ID = 50A
7.0
6.0
5.0
TJ = 125°C
4.0
3.0
2.0 TJ = 25°C
1.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
125
Limited By Package
100
75
50
25
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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January 17, 2014


International Rectifier Electronic Components Datasheet

IRFH7446PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH7446PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
eSingle Pulse Avalanche Energy
lSingle Pulse Avalanche Energy Tested Value
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
kJunction-to-Case
kJunction-to-Case
jJunction-to-Ambient
jJunction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 –––
––– 0.032
––– 2.5
––– 3.8
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.2 –––
––– –––
––– –––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
––– –––
RG Internal Gate Resistance
––– 1.5
Max.
–––
–––
3.3
–––
3.9
1.0
150
100
-100
–––
Max.
117™
74™
85
468
78
0.63
± 20
-55 to + 150
Units
A
W
W/°C
V
°C
78
153
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
–––
–––
Max.
1.6
31
35
23
mJ
A
mJ
Units
°C/W
Units
Conditions
V
V/°C
m
m
V
µA
nA
VGS = 0V, ID = 250µA
dReference to 25°C, ID = 1.0mA
gVGS = 10V, ID = 50A
gVGS = 6.0V, ID = 50A
VDS = VGS, ID = 100µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width 400µs; duty cycle 2%.
temperature. Current is limited to 71A by source bond technology. † Coss eff. (TR) is a fixed capacitance that gives the same charging time
Note that current limitations arising from heating of the
as Coss while VDS is rising from 0 to 80% VDSS.
device leads may occur with some lead mounting arrangements.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
temperature.
FR-4 material.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.062mH
RG = 50, IAS = 50A, VGS =10V.
„ ISD 50A, di/dt 1123A/µs, VDD V(BR)DSS, TJ 150°C.
‰ Rθ is measured at TJ approximately 90°C.
Š This value determined from sample failure population,
starting TJ = 25°C, L= 0.062mH, RG = 50, IAS = 50A, VGS =10V.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 17, 2014


Part Number IRFH7446PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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