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International Rectifier Electronic Components Datasheet

IRFH8318TRPBF Datasheet

HEXFET Power MOSFET

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IRFH8318PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30
± 20
3.1
4.6
19
50i
V
V
mΩ
nC
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.7°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH8318TRPBF
IRFH8318TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
27
21
120hi
76hi
50i
400
3.6
59
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


International Rectifier Electronic Components Datasheet

IRFH8318TRPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH8318PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
81
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
–––
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
2.5
3.6
1.8
-6.0
–––
–––
–––
–––
–––
41
19
5.8
2.3
4.4
6.5
6.7
18
1.7
15
33
18
12
3180
700
270
Max.
–––
–––
3.1
4.6
2.35
–––
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
V/°C
eemΩ
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
V
mV/°C
VDS
=
VGS,
ID
=
50μA
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
VDS = 15V
nC
VGS = 4.5V
ID = 20A
nC VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns
ID = 20A
RG=1.8Ω
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
160
20
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 50
––– –––
––– –––
––– 16
––– 35
400
1.0
24
53
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 380A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Parameter
Typ.
–––
–––
–––
–––
Max.
1.7
32
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014


Part Number IRFH8318TRPBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH8318TRPBF Datasheet PDF






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International Rectifier





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