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International Rectifier Electronic Components Datasheet

IRFH9310PBF Datasheet

HEXFET Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@TA = 25°C)
-30 V
4.6 m
110 nC
2.8
-21 A
6 mm
Applications
Charge and Discharge Switch for Notebook PC Battery Application
IRFH9310PbF
HEXFET® Power MOSFET
S
DS
DS
G
D
D
PQFN
5mm x 6mm
Features and Benefits
Features
Low RDSon (4.6mΩ)
Industry-Standard PQFN Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRFH9310TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Continuous Drain Current, VGS @ -10V (Package Limited)
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-21
-17
-107
- 86
-40
-170
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 26, 2014


International Rectifier Electronic Components Datasheet

IRFH9310PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH9310PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
Gate Threshold Voltage
-1.3
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
hRG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ù(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
gRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
0.020
3.7
5.7
-1.9
-5.8
–––
–––
–––
–––
–––
58
110
17
28
2.8
25
47
65
70
5250
1300
880
Typ.
–––
–––
–––
42
42
Max.
–––
–––
4.6
7.1
-2.4
–––
-1.0
-150
-100
100
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -21A
eVGS = -4.5V, ID = -17A
V
mV/°C
µA
nA
S
nC
nC
VDS = VGS, ID = -100µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -17A
VDS = -15V,VGS = -4.5V,ID = - 17A
VGS = -10V
VDS = -15V
ID = -17A
eVDD = -15V, VGS = -4.5V
ns
ID = -1.0A
RG = 1.8
See Figs. 19a & 19b
VGS = 0V
pF VDS = -15V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
170
-17
Units
mJ
A
Max.
-3.1
-170
-1.2
63
63
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -3.1A, VGS = 0V
TJ = 25°C, IF = -3.1A, VDD = -24V
edi/dt = 100/µs
Typ.
–––
–––
–––
Max.
1.6
40
35
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.1mH, RG = 50, IAS = -17A.
ƒ Pulse width 400µs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 26, 2014


Part Number IRFH9310PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH9310PBF Datasheet PDF






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International Rectifier





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