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International Rectifier Electronic Components Datasheet

IRFHM3911TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
100
115
17
11
V
m
nC
A
Applications
 POE+ Power Sourcing Equipment Switch
IRFHM3911TRPbF
HEXFET® Power MOSFET
  
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM3911PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM3911TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
3.2
11
6.6
20
36
2.8
29
0.023
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 1, 2014


International Rectifier Electronic Components Datasheet

IRFHM3911TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM3911TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
111
92
–––
-7.6
–––
–––
–––
–––
–––
17
2.5
1.4
5.4
7.7
6.8
5.9
3.8
5.0
5.8
16
5.1
760
73
13
 
 
Typ.
–––
–––
–––
47
381
    
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
115 mVGS = 10V, ID = 6.3A
4.0 V VDS = VGS, ID = 35µA
––– mV/°C
20 µA
250
100 nA
-100
––– S
26
–––  
––– nC
–––  
–––  
–––  
––– nC
–––  
–––
––– ns
–––  
–––  
–––
––– pF
–––  
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VDS = 25V, ID = 6.3A
VDS = 50V
VGS = 10V
ID = 6.3A
VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
ID = 6.3A
RG=1.8
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
 
Typ.
–––
–––
 
 
Max.
41
6.3
    
Max. Units
Conditions
11 A MOSFET symbol
showing the
36
integral reverse
G
p-n junction diode.
D
S
1.3 V TJ = 25°C, IS = 6.3A, VGS = 0V
71 ns TJ = 25°C, IF = 6.3A, VDD = 50V
571 nC di/dt = 500A/µs
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
 
Typ.
–––
–––
–––
–––
 
Max.
4.3
40
45
31
 
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 1, 2014


Part Number IRFHM3911TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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