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IRFHM4226TRPBF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All di

Key Features

  • Low RDSon (.

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Part Number Description Manufacturer
IRFHM4226TRPbF Power MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 2.4 3.3 16 60 V m nC A   Applications Control or Synchronous MOSFET for high frequency buck converters FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<2.4m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM4226TRPbF Package Type   PQFN 3.3mm x 3.