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International Rectifier Electronic Components Datasheet

IRFHM4226TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
2.4
3.3
16
60
V
m
nC
A
 
Applications
Control or Synchronous MOSFET for high frequency buck converters
FastIRFET™
IRFHM4226TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Features
Low RDSon (<2.4m)
Low Charge (typical 16nC)
Low Thermal Resistance to PCB (<3.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number  
IRFHM4226TRPbF
Package Type  
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4226TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
28
105
67
60
420
2.7
39
0.021
-55 to + 150
 
Units
V
A 
 
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
December 9, 2014


International Rectifier Electronic Components Datasheet

IRFHM4226TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM4226TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
136
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
21
1.7
2.6
1.6
-5.7
–––
–––
–––
–––
32
16
3.6
2.0
5.8
4.6
7.8
15
1.1
11
  
 
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
2.4
3.3
m
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 30A
2.1 V VDS = VGS, ID = 50µA
––– mV/°C
1.0
100
-100
–––
–––
24
µA VDS = 20V, VGS = 0V
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID = 30A
nC VGS = 10V, VDS = 13V, ID = 30A
–––  
––– nC
–––  
–––  
–––  
VDS = 13V
VGS = 4.5V
ID = 30A
––– nC VDS = 16V, VGS = 0V
–––  
––– VDD = 13V, VGS = 4.5V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
––– 35 ––– ns ID = 30A
––– 14 –––  
RG=1.8
––– 8.1 –––  
––– 2000 –––
VGS = 0V
––– 570 ––– pF VDS = 13V
––– 150 –––  
ƒ = 1.0MHz
 
Typ.
–––
–––
 
Max.
124
30
 
Units
mJ
A
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
16
28
  
Max. Units
60
420
A
1.0 V
24 ns
42 nC
 
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VDD = 13V
di/dt = 450A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
3.2
35
47
30
 
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
December 9, 2014


Part Number IRFHM4226TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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