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International Rectifier Electronic Components Datasheet

IRFHM830DTRPbF Datasheet

HEXFET Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
4.3
13
1.1
40h
V
mΩ
nC
Ω
A
Applications
Synchronous MOSFET for Buck Converters
Features and Benefits
Features
Low RDSon (4.3mΩ)
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFHM830DPbF
HEXFET® Power MOSFET
3.3mm x 3.3mm PQFN
results in
Benefits
Lower Conduction Losses
Lower switching losses
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
Max.
30
±20
20
16
40h
40h
160
2.8
37
0.022
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
June 6, 2014


International Rectifier Electronic Components Datasheet

IRFHM830DTRPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFHM830DPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
3.4
5.7
1.8
-6.0
–––
–––
–––
–––
–––
27
13
2.9
1.8
4.5
3.8
6.3
10
1.1
9.8
20
9.1
6.7
1797
363
148
Max. Units
Conditions
–––
–––
4.3
7.1
2.35
–––
500
5
100
-100
–––
–––
20
V VGS = 0V, ID = 1mA
V/°C Reference to 25°C, ID = 4mA
eemΩ
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 50μA
mV/°C VDS = VGS, ID = 1mA
μA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 20A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 20A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
82
20
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 40
––– ––– 160
––– ––– 0.85
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
––– 16 24 ns TJ = 25°C, IF = 20A, VDD = 15V
––– 17 26 nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
3.4
37
46
31
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 6, 2014


Part Number IRFHM830DTRPbF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFHM830DTRPbF Datasheet PDF






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International Rectifier





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