IRFHM830DTRPbF - HEXFET Power MOSFET

This page provides the datasheet information for the IRFHM830DTRPbF, a member of the IRFHM830DPbF HEXFET Power MOSFET family.

Datasheet Summary

Features

Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (.

International Rectifier

📥 Download Datasheet

Datasheet Details

Part number	IRFHM830DTRPbF
Manufacturer	International Rectifier
File Size	259.45 KB
Description	HEXFET Power MOSFET
Datasheet	IRFHM830DTRPbF Datasheet
Additional preview pages of the IRFHM830DTRPbF datasheet.

📁 Similar Datasheet

IRFHM4226TRPbF - Power MOSFET (Infineon)
IRFH4201 - Power MOSFET (Infineon)
IRFH4201PbF - Power MOSFET (Infineon)
IRFH7184PbF - Power MOSFET (Infineon)
IRFH7440PbF - Power MOSFET (Infineon)
IRFH8201PbF - MOSFET (Infineon)
IRFH8202 - MOSFET (Infineon)
IRFH8202TRPbF - MOSFET (Infineon)
IRFH8307TRPbF - Power MOSFET (Infineon)
IRF-24 - Inductors (Vishay)

Other Datasheets by International Rectifier

IRFHM830DPbF - HEXFET Power MOSFET
IRFHM830PBF - Power MOSFET
IRFHM831PBF - HEXFET Power MOSFET
IRFHM8326PBF - Power MOSFET
IRFHM8329PBF - Power MOSFET
IRFHM8330PBF - Power MOSFET
IRFHM8334TRPBF - Power MOSFET
IRFHM8337TRPBF - Power MOSFET

Full PDF Text Transcription

Click to expand full text

IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.

Published: Oct 28, 2014 |