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IRFHM830DTRPbF - HEXFET Power MOSFET

Download the IRFHM830DTRPbF datasheet PDF. This datasheet also covers the IRFHM830DPbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFHM830DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRFHM830DTRPbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFHM830DTRPbF. For precise diagrams, and layout, please refer to the original PDF.

IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applica...

View more extracted text
3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (< 1.

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