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International Rectifier Electronic Components Datasheet

IRFHM8326PBF Datasheet

Power MOSFET

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VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±20
4.7
6.7
20
70
V
V
m
nC
A
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters
IRFHM8326PbF
HEXFET® Power MOSFET
  Top View
 
D5
D6
4G
3S
G
SS
S
D7
D8
2S
1S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8326PbF
Package Type
 
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8326TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
 
Max.
± 20
19
15
70
44
25
278
2.8
37
0.023
-55 to + 150
 
Units
V
A
W
W/°C
°C
March 14, 2013
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFHM8326PBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM8326PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
22
3.8
5.2
1.7
-10
–––
–––
–––
–––
–––
39
20
4.8
2.6
6.5
6.1
9.1
11
1.9
12
35
18
12
2496
524
273
 
 
Typ.
–––
–––
–––
15
14
 
Max.
–––
–––
4.7
6.7
2.2
–––
1.0
150
100
-100
–––
–––
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
–––
 
Max.
25
278
1.0
23
21
  
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 50µA
mV/°C
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
 
nC
 
 
VDS = 15V
VGS = 4.5V
ID = 20A
 
nC VDS = 16V, VGS = 0V
 
ns
 
 
VDD = 15V, VGS = 4.5V
ID = 20A
RG=1.8
pF
 
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
  
Max.
58
20
  
Units
Conditions
A MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs
    
Typ.
–––
Max.
3.4
Units
––– 41 °C/W
––– 44
––– 31
2 www.irf.com © 2013 International Rectifier
March 14, 2013
Free Datasheet http://www.Datasheet4U.com


Part Number IRFHM8326PBF
Description Power MOSFET
Maker International Rectifier
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IRFHM8326PBF Datasheet PDF






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1 IRFHM8326PBF Power MOSFET
International Rectifier





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