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International Rectifier Electronic Components Datasheet

IRFHM8329PBF Datasheet

Power MOSFET

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VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±20
6.1
8.8
13
24
V
V
m
nC
A
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters
IRFHM8329PbF
HEXFET® Power MOSFET
  Top View
 
D5
D6
4G
3S
S SG
S
D7
D8
2S
1S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8329PbF
Package Type
 
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8329TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2012 International Rectifier
 
Max.
± 20
16
13
57
36
24
230
2.6
33
0.021
-55 to + 150
 
Units
V
A
W
W/°C
°C
December 20, 2012
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFHM8329PBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM8329PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
21
4.8
6.8
1.7
-6.0
–––
–––
–––
–––
–––
26
13
2.9
2.0
4.6
3.5
6.6
7.8
1.4
14
74
14
14
1710
360
180
 
Max.
–––
–––
6.1
8.8
2.2
–––
1.0
150
100
-100
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
  
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 16A
V
mV/°C
VDS = VGS, ID = 25µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 20A
nC VGS = 10V, VDS = 15V, ID = 20A
 
nC
 
 
 
nC
 
ns
 
 
pF
 
VDS = 15V
VGS = 4.5V
ID = 20A
VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ID = 20A
RG=1.8
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
–––
Max.
43
20
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
Conditions
–––
–––
–––
–––
24
A
230
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
––– ––– 1.0 V TJ = 25°C, IS = 20A, VGS = 0V
––– 13 20 ns TJ = 25°C, IF = 20A, VDD = 15V
––– 8.1 12 nC di/dt = 290A/µs
D
S
 
Typ.
–––
–––
–––
–––
 
Max.
3.8
42
47
32
 
Units
°C/W
2 www.irf.com © 2012 International Rectifier
December 20, 2012
Free Datasheet http://www.Datasheet4U.com


Part Number IRFHM8329PBF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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International Rectifier





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