IRFI1310N - Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRFI1310N
Manufacturer	International Rectifier (now Infineon)
File Size	104.61 KB
Description	Power MOSFET
Datasheet	IRFI1310N Datasheet

General Description

l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.036Ω ID = 24A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

Overview

PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.

= 4.

Key Features

.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X AE MX PA LM EP: L E TH N AIR 1 0F 1I8 0 40G : IS T HIS IS A IS N F IR W ITH ASS W ITH AE SM SB EL MY BLY CE OD 401 L O TL O CT OD 9E B 1E M A IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF 1I8 01 R E C T IF IE R IR 40 0G LOGO 9 2 46 LOG.

📁 Similar Datasheet

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