IRFI1310N Overview
l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.036Ω ID = 24A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRFI1310N Key Features
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm
