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IRFI1310N - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • .54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112) 2.65 (.104) M IN IM U M C R E E P A G E D IS TA N C E B E TW E E N A -B -C -D = 4.80 (.189) Part Marking Information TO-220 Fullpak E X AE MX PA LM EP: L E TH N AIR 1 0F 1I8 0 40G : IS T HIS IS A IS N F IR W ITH ASS W ITH AE SM SB EL MY BLY CE OD 401 L O TL O CT OD 9E B 1E M A IN TE R N A T IO N A L IN T E R N A T IO N A L R E C TIF IE R IR FF 1I8 01 R E C T IF IE R IR 40 0G LOGO 9 2 46 LOG.

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Full PDF Text Transcription

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PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.036Ω ID = 24A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
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