Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 1 - GA TE 2 - D R AIN 3 - SO U RC E NO TE S: 1 D IM EN SIO N IN G & T OLER AN C ING PE R A NS I Y14.5M , 1982 1 2 3 2 C ON T R OLLIN G D IM EN SION : IN C H. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C A D
16.00 (.630) 15.80 (.622)
1.15 (.045) M IN. 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X
0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B
0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 3X
B
M IN IM U M C REE PAG E D IST AN C E BET W EEN A -B -C -D = 4.80 (.189)
Part Marking Info.
IRFI3205 Datasheet
