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IRFI3205 - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • 1 - GA TE 2 - D R AIN 3 - SO U RC E NO TE S: 1 D IM EN SIO N IN G & T OLER AN C ING PE R A NS I Y14.5M , 1982 1 2 3 2 C ON T R OLLIN G D IM EN SION : IN C H. 3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530) C A D 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN. 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.010) M A M B 0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 3X B M IN IM U M C REE PAG E D IST AN C E BET W EEN A -B -C -D = 4.80 (.189) Part Marking Info.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1374B IRFI3205 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.008Ω ID = 64A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.