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International Rectifier Electronic Components Datasheet

IRFI3205PBF Datasheet

Power MOSFET

No Preview Available !

 
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFI3205PbF
HEXFET® Power MOSFET
 
VDSS
55V
RDS(on)
0.008
ID 64A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Fullpak eliminates the need for additional insulating
hardware in commercial-industrial applications. The moulding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heatsink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI3205PbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI3205PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
64
45
390
63
0.42
± 20
480
59
6.3
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
 
Thermal Resistance  
Symbol
RJC Junction-to-Case
RJA Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
2.4
65
Units
°C/W
2017-04-27


International Rectifier Electronic Components Datasheet

IRFI3205PBF Datasheet

Power MOSFET

No Preview Available !

  IRFI3205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
C
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008  VGS = 10V, ID = 34A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
42 ––– ––– S VDS = 25V, ID = 59A
––– –––
––– –––
25
250
µA
VDS = 55V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
––– ––– 170
ID = 59A
––– ––– 32 nC   VDS = 44V
––– ––– 74
––– 14 –––
––– 100 –––
––– 43 –––
––– 70 –––
––– 4.5 –––
––– 7.5 –––
VGS = 10V , See Fig. 6 and 13
VDD = 28V
ns
ID = 59A
RG= 2.5
RD= 0.39See Fig. 10
Between lead,
nH
 
6mm
from
(0.25in.)
package
and center of die contact
––– 4000 –––
––– 1300 –––
––– 480 –––
VGS = 0V
pF
 
VDS
ƒ=
= 25V
1.0MHz,
See
Fig.
5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
64
390
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C,IS = 34A,VGS = 0V 
trr Reverse Recovery Time
––– 110 170 ns TJ = 25°C ,IF = 59A
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– 450 680 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 190H, RG = 25, IAS = 59A (See fig. 12)
ISD 59A, di/dt 290A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRF3205 data and test conditions.
2 2017-04-27


Part Number IRFI3205PBF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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