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International Rectifier Electronic Components Datasheet

IRFI3306GPBF Datasheet

Power MOSFET

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Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Halogen-Free
IRFI3306GPbF
VDSS
RDS(on)
ID
typ.
max.
 D
60V
3.3m
4.2m
71A
D 
G
G
Gate
S
D
G
S
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI3306GPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI3306GPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS
TJ
TSTG
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
Max.
71
50
300
46
0.31
± 20
311
-55 to + 175
300
10lbin (1.1Nm)
Typ.
–––
–––
Max.
3.23
65
Units
A
W
W/°C
V
mJ
 
°C 
 
 
Units
°C/W
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 7, 2013
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFI3306GPBF Datasheet

Power MOSFET

No Preview Available !

  IRFI3306GPbF
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
 
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.068 ––– V/°C Reference to 25°C, ID = 5.0mA
––– 3.3 4.2 m VGS = 10V, ID = 43A
2.0 ––– 4.0
V VDS = VGS, ID = 150µA
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250  
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
  Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100  
VGS = -20V
RG(int)
Internal Gate Resistance
––– 0.72 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
89 ––– ––– S VDS = 25V, ID = 43A
––– 90 135  
ID = 43A
––– 22 ––– nC VDS = 30V
––– 26 –––  
VGS = 10V
––– 116 –––
ID = 43A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics  
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
30
45
33
4685
506
310
733
822
–––
––– ns
–––  
–––  
–––
–––  
––– pF
–––  
–––  
VDD = 39V
ID = 43A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
––– ––– 71
A MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode)
––– ––– 300
A integral reverse
p-n junction diode.
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
––– 2.3 ––– V/ns
trr   Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
–––
–––
–––
–––
43
47
63
78
–––
–––
–––
–––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 51V
IF = 43A
di/dt = 100A/µs
––– 2.5 ––– A TJ = 25°C
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.34mH
RG = 50, IAS = 43A, VGS =10V. Part not recommended for use
above this value.
Pulse width 400µs; duty cycle 2%.
Rθ is measured at TJ approximately 90°C.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
October 7, 2013
Free Datasheet http://www.Datasheet4U.com


Part Number IRFI3306GPBF
Description Power MOSFET
Maker International Rectifier
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