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International Rectifier Electronic Components Datasheet

IRFI4019H-117P Datasheet

DIGITAL AUDIO MOSFET

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PD - 97074A
IRFI4019H-117P
DIGITAL AUDIO MOSFET
Features
Ÿ Integrated Half-Bridge Package
Ÿ Reduces the Part Count by Half
Ÿ Facilitates Better PCB Layout
Ÿ Key Parameters Optimized for Class-D
Audio Amplifier Applications
Ÿ Low RDS(ON) for Improved Efficiency
Ÿ Low Qg and Qsw for Better THD and
Improved Efficiency
Ÿ Low Qrr for Better THD and Lower EMI
Ÿ Can Delivery up to 200W per Channel into
8Load in Half-Bridge Configuration
Amplifier
Ÿ Lead-Free Package
Key Parameters h
VDS 150
RDS(ON) typ. @ 10V
80
Qg typ.
13
Qsw typ.
4.1
RG(int) typ.
2.5
TJ max
150
V
m:
nC
nC
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
Description
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
Absolute Maximum Ratings h
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
150 V
±20
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Single Pulse Avalanche Energyd
Power Dissipation f
Power Dissipation f
8.7 A
6.2
34
77 mJ
18 W
7.2
Linear Derating Factor
0.15 W/°C
TJ Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10lbxin (1.1Nxm)
Thermal Resistance h
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Notes  through † are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
8/22/06
Free Datasheet http://www.datasheet4u.net/


International Rectifier Electronic Components Datasheet

IRFI4019H-117P Datasheet

DIGITAL AUDIO MOSFET

No Preview Available !

IRFI4019H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) h
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
––– 80
95 mVGS = 10V, ID = 5.2A e
3.0 ––– 4.9
V VDS = VGS, ID = 50µA
––– -11 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 250
VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
11 ––– ––– S VDS = 50V, ID = 5.2A
Qg Total Gate Charge
––– 13 20
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 3.3 –––
VDS = 75V
––– 0.8 ––– nC VGS = 10V
––– 3.9 –––
ID = 5.2A
––– 5.0 –––
See Fig. 6 and 19
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.1 –––
RG(int)
Internal Gate Resistance
––– 2.5 –––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 7.0 –––
VDD = 75V, VGS = 10V e
––– 6.6 –––
ID = 5.2A
––– 13 ––– ns RG = 2.4
––– 3.1 –––
Ciss Input Capacitance
––– 810 –––
VGS = 0V
Coss Output Capacitance
––– 100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 15 –––
ƒ = 1.0MHz,
See Fig.5
Coss Effective Output Capacitance
LD Internal Drain Inductance
––– 97 –––
––– 4.5 –––
VGS = 0V, VDS = 0V to 120V
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
Diode Characteristics h
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
57
140
Max. Units
Conditions
8.7 MOSFET symbol
A showing the
34 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V e
86 ns TJ = 25°C, IF = 5.2A
210 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 5.8mH, RG = 25, IAS = 5.2A.
ƒ Pulse width 400µs; duty cycle 2%.
2
„ Rθ is measured at TJ of approximately 90°C.
… Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
† Specifications refer to single MosFET.
www.irf.com
Free Datasheet http://www.datasheet4u.net/


Part Number IRFI4019H-117P
Description DIGITAL AUDIO MOSFET
Maker International Rectifier
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