IRFI4110GPBF
- 96347
IRFI4110GPb F
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID (Silicon Limited)
100V 3.7mΩ 4.5mΩ 72A
Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode d V/dt and d I/dt Capability l Lead-Free l Halogen-Free
TO-220AB Full-Pak
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current
Max.
72 51 290 61 0.41 ± 20 27 -55 to + 175 300 10lb in (1.1N m) 71 43 6.1
Units
A c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage...
