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International Rectifier Electronic Components Datasheet

IRFI4510GPBF Datasheet

Power MOSFET

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PD - 97790
IRFI4510GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
VDSS
RDS(on)
ID
typ.
max.
HEXFET® Power MOSFET
100V
10.7m
13.5m
35A
DD
G
G
Gate
S
D
G
S TO-220AB Full-Pak
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
fRJC
fRJA
Junction-to-Case
Junction-to-Ambient
Max.
35
24
180
42
0.28
±20
206
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
05/15/12
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFI4510GPBF Datasheet

Power MOSFET

No Preview Available !

IRFI4510GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
RG(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100 ––– –––
V VGS = 0V, ID = 250μA
e––– 0.11 ––– V/°C Reference to 25°C, ID = 5mA
e––– 10.7 13.5 mVGS = 10V, ID = 21A
2.0 ––– 4.0
V VDS = VGS, ID = 100μA
––– ––– 20
μA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.6 –––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
55 ––– –––
Qg Total Gate Charge
––– 54 81
Qgs Gate-to-Source Charge
––– 13 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 16 –––
td(on) Turn-On Delay Time
––– 16 –––
tr Rise Time
––– 33 –––
td(off) Turn-Off Delay Time
––– 54 –––
tf Fall Time
––– 37 –––
Ciss Input Capacitance
––– 2998 –––
Coss Output Capacitance
––– 216 –––
Crss Reverse Transfer Capacitance
––– 103 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 261 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 494 –––
Diode Characteristics
S VDS = 50V, ID = 21A
nC ID = 21A
eVDS = 50V
VGS = 10V
ns VDD = 65V
ID = 21A
eRG = 7.5
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
hVGS = 0V, VDS = 0V to 80V , See Fig.11
VGS = 0V, VDS = 0V to 80V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 35
A MOSFET symbol
showing the
D
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
––– ––– 180 A integral reverse
G
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
––– 39 59
ns TJ = 25°C
VR = 85V
––– 47 71
TJ = 125°C
––– 63 95 nC TJ = 25°C
eIF = 21A
di/dt = 100A/μs
––– 90 135
TJ = 125°C
––– 2.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.93mH
RG = 50, IAS = 21A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 400μs; duty cycle 2%.
„ Ris measured at TJ approximately 90°C.
… Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number IRFI4510GPBF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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