IRFI9540N

Power MOSFET

International Rectifier

IRFI9540N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer.

IRFI9540N Datasheet (150.85 KB)

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Datasheet Details

Part number:

IRFI9540N

Manufacturer:

International Rectifier

File Size:

150.85 KB

Description:

Power mosfet.
PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Chan.

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IRFI9540N Power MOSFET International Rectifier

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IRFI9540N General Description

Datasheet Details

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