* SuperFast body diode eliminates the need for external diodes in ZVS applications.
* Lower Gate charge results in simpler drive requirements.
* Enhanced dv/dt capabilities offer improved ruggedness.
* Higher Gate voltage threshold offers improved noise immunity. TO-
IRFIB7N50LPbF Datasheet (219.98 KB)
IRFIB7N50LPbF
International Rectifier
219.98 KB
Power mosfet.
PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET® Power MOSFET Applications Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID .
📁 Related Datasheet
IRFIB7N50L Power MOSFET (International Rectifier)
IRFIB7N50L Power MOSFET (Vishay)
IRFIB7N50A Power MOSFET (International Rectifier)
IRFIB7N50A Power MOSFET (Vishay)
IRFIB7N50A N-Channel MOSFET (INCHANGE)
IRFIB7N50APBF SMPS MOSFET (International Rectifier)
IRFIB41N15D N-Channel MOSFET (INCHANGE)
IRFIB41N15D Power MOSFET (International Rectifier)
IRFIB41N15DPbF HEXFET Power MOSFET (International Rectifier)
IRFIB41N15DPbF Power MOSFET (Infineon)
