IRFIZ48NPBF Datasheet - International Rectifier

Power MOSFET

IRFIZ48NPBF General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRFIZ48NPBF Datasheet (263.58 KB)

IRFIZ48NPBF Datasheet Preview — Preview of IRFIZ48NPBF PDF

Datasheet Details

Part number:

IRFIZ48NPBF

Manufacturer:

International Rectifier

File Size:

263.58 KB

Description:

Power mosfet.
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l.

📁 Related Datasheet

IRFIZ48N Power MOSFET (International Rectifier)

IRFIZ48N N-Channel MOSFET (INCHANGE)

IRFIZ48 Power MOSFET (International Rectifier)

IRFIZ48G Power MOSFET (International Rectifier)

IRFIZ48G N-Channel MOSFET (INCHANGE)

IRFIZ48G Power MOSFET (Vishay)

IRFIZ48V Power MOSFET (International Rectifier)

IRFIZ48VPbF Power MOSFET (International Rectifier)

TAGS

IRFIZ48NPBF Power MOSFET International Rectifier

Image Gallery