IRFL4310PbF Datasheet, International Rectifier

G D VDSS = 100V RDS(on) = 0.20Ω ID = 1.6A S The SOT-223 package is designed for surface-mount using vapor phase, inf.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .