IRFN250 - POWER MOSFET N-CHANNE

International Rectifier (now Infineon)

Datasheet Details

Part number	IRFN250
Manufacturer	International Rectifier (now Infineon)
File Size	210.79 KB
Description	POWER MOSFET N-CHANNE
Datasheet	IRFN250 Datasheet

Overview

Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No.

PD-9.1549 HEXFET® POWER MOSFET 200 Volt, 0.100Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry achieves very low on-state resistance combined with high transconductance.

Key Features

s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive A.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IRFN250SMD	N-CHANNEL POWER MOSFET	Seme LAB

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRFN240	POWER MOSFET N-CHANNE
IRFN044	POWER MOSFET N-CHANNEL
IRFN054	POWER MOSFET N-CHANNEL
IRFN140	POWER MOSFET N-CHANNEL
IRFN150	POWER MOSFET
IRFN340	POWER MOSFET
IRFN350	POWER MOSFET N-CHANNEL
IRFN3710	TRANSISTOR N-CHANNEL
IRFN440	POWER MOSFET N-CHANNEL
IRFN440	POWER MOSFET N-CHANNEL