* s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Contin
IRFN250
International Rectifier
210.79 KB
Power mosfet n-channe.
Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET® POWER MOSFET 200 Volt, 0.100Ω HEXFET HEXF.
📁 Related Datasheet
IRFN250SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN214B 250V N-Channel MOSFET (Fairchild Semiconductor)
IRFN240 POWER MOSFET N-CHANNE (International Rectifier)
IRFN240SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN044 POWER MOSFET N-CHANNEL (International Rectifier)
IRFN044SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN054 POWER MOSFET N-CHANNEL (International Rectifier)
IRFN054SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN130SMD N-CHANNEL POWER MOSFET (Seme LAB)
IRFN140 POWER MOSFET N-CHANNEL (International Rectifier)
