IRFN440 Datasheet POWER MOSFET N-CHANNEL

Manufacturer: International Rectifier (now Infineon)

IRFN440 power mosfet n-channel by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFN440
Manufacturer	International Rectifier (now Infineon)
File Size	204.99 KB
Description	POWER MOSFET N-CHANNEL
Datasheet	IRFN440 Datasheet

Overview

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PD-9.1552 HEXFET® POWER MOSFET 500 Volt, 0.85Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry achieves very low on-state resistance combined with high transconductance.

Key Features

s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive A.

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